Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces Pub Date : 2021-04-27 DOI:10.3390/SURFACES4020013
Yannick Hermans, F. Mehmood, K. Lakus-Wollny, J. Hofmann, T. Mayer, W. Jaegermann
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Abstract

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.
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反应性双磁控溅射:制备化学计量微晶ZnWO4薄膜的快速方法
首次采用反应性双磁控溅射法制备了一种极具光催化和闪烁材料ZnWO4薄膜。ZnO靶用射频信号操作,W靶用直流信号操作。改变ZnO靶上的功率,使其与工作在25w下的W靶的溅射速率相匹配。利用光谱学、x射线衍射和扫描电镜(包括能量色散x射线能谱和x射线光电子能谱)表征了工艺参数的影响。结果表明,在溅射过程中,在55 W的功率下操作ZnO靶材,并在600℃下退火至少10 h,可以获得化学计量的微晶ZnWO4薄膜。当使用FTO镀膜玻璃衬底时,退火也导致Na的掺入,从而得到n+掺杂的ZnWO4薄膜。
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