Resonance Effects in the Raman Spectrum of CdGa2Se4

A. Parisini, P. P. Lottici, C. Razzetti, R. Bacewicz
{"title":"Resonance Effects in the Raman Spectrum of CdGa2Se4","authors":"A. Parisini, P. P. Lottici, C. Razzetti, R. Bacewicz","doi":"10.1002/PSSB.2221340110","DOIUrl":null,"url":null,"abstract":"Resonance effects are observed in the Raman cross-section of the defect chalcopyrite CdGa2Se4. The results indicate a strong resonance of the highest frequency E(LO) sphalerite-like phonons in forbidden geometry, similar to the behaviour observed for zincblende-like crystals. The forbidden scattering may be described through a Prohlich intraband mechanism at the fundamental direct gap.\r\n\r\n\r\n\r\nNous presentons les effets de la resonance sur la section efficace de la diffusion Raman de la chalcopyrite defectueuse CdGa2Se4. Les resultats montrent une forte resonance des phonons E(LO) les plus eleves en frequence dans une geometrie interdite. Cette resonance est comparable a celle observee dans les cristaux du type zinc-blende. La diffusion interdite peut ětre decrite par un processus d.'interaction de type Frohlich, avec I'energie fondamentale du gap direct.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"29 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Mon, March 21, 2022","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSB.2221340110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Resonance effects are observed in the Raman cross-section of the defect chalcopyrite CdGa2Se4. The results indicate a strong resonance of the highest frequency E(LO) sphalerite-like phonons in forbidden geometry, similar to the behaviour observed for zincblende-like crystals. The forbidden scattering may be described through a Prohlich intraband mechanism at the fundamental direct gap. Nous presentons les effets de la resonance sur la section efficace de la diffusion Raman de la chalcopyrite defectueuse CdGa2Se4. Les resultats montrent une forte resonance des phonons E(LO) les plus eleves en frequence dans une geometrie interdite. Cette resonance est comparable a celle observee dans les cristaux du type zinc-blende. La diffusion interdite peut ětre decrite par un processus d.'interaction de type Frohlich, avec I'energie fondamentale du gap direct.
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CdGa2Se4喇曼光谱中的共振效应
在缺陷黄铜矿CdGa2Se4的拉曼截面上观察到共振效应。结果表明,在禁止的几何结构中,E(LO)类闪锌矿声子的最高频率有强烈的共振,类似于在类锌闪锌矿晶体中观察到的行为。禁止散射可以通过在基本直接间隙处的Prohlich带内机制来描述。Nous对CdGa2Se4的共振、截面、扩散、拉曼和黄铜矿缺陷的影响较小。结果表明,声子(LO)的共振强度为1倍,声子的共振强度为1倍,声子的共振强度为1倍,声子的共振强度为1倍。在细胞内观察到的cte共振可与赤霞珠型闪锌矿相媲美。La扩散过程是指扩散过程。相互作用de型Frohlich,平均能量基础是直接的。
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