{"title":"Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system","authors":"A.G. Nassibian, A.K. Duong","doi":"10.1016/0378-5963(85)90235-1","DOIUrl":null,"url":null,"abstract":"<div><p>A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1011-1018"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90235-1","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
