{"title":"The effect of ion irradiation on dephasing of coherent optical phonons in GaP","authors":"Takuto Ichikawa, Y. Saito, M. Hase","doi":"10.1063/5.0020810","DOIUrl":null,"url":null,"abstract":"The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga$^{+}$ ion dose of 10$^{13}$/cm$^{2}$, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0020810","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga$^{+}$ ion dose of 10$^{13}$/cm$^{2}$, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.
利用基于电光采样的飞秒泵浦探测技术研究了离子辐照GaP中相干纵向光学声子的消相现象。研究发现，在砷离子辐照下，少量缺陷的引入大大延长了相干LO声子的消相时间。当Ga$^{+}$离子剂量为10$^{13}$/cm$^{2}$时，在室温下观察到的最大失相时间为9.1 ps，明显大于离子辐照前GaP的8.3 ps。较长的消相时间是由缺陷诱导的深能级抑制电子- lo -声子散射来解释的。
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