DYNAMICS OF EMISSION FROM A SEMICONDUCTOR LASER WITH AN EXTERNAL RESONATOR

N. Gavrilenko, V. D. Kurnosov, O. Semenova, S. K. Taktashov, R. V. Chernov, Yu P Chetkin
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引用次数: 1

Abstract

Theoretical and experimental investigations were made of an ILPN-216A semiconductor emitter operating at 1.3 μm. A feature of the design of this emitter was a laser diode with an external resonator as the active element. The calculations were in good agreement with the experimental values of the mode intensity in the cw and pulsed regimes. In the pulsed regime when the ILPN-216A emitter was pumped additionally by a continuous threshold current, a single-frequency radiation spectrum was obtained and the ratio of the emitted mode to the adjacent mode was at least 20 dB.
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外腔半导体激光器的发射动力学
对工作在1.3 μm的ILPN-216A半导体发射极进行了理论和实验研究。该发射器设计的一个特点是用一个外部谐振器作为有源元件的激光二极管。计算结果与连续波和脉冲模态强度的实验值吻合较好。在脉冲状态下,当外加连续阈值电流泵浦ILPN-216A发射极时,可获得单频辐射谱,且发射模式与相邻模式之比至少为20 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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