Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers

Hao Yang, S. Lian, P. Chapon, Y. Song, J. Wang, Congkang Xu
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引用次数: 2

Abstract

Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B4C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.
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Mo/B4C/Si纳米多层膜高分辨率脉冲射频GDOES深度剖面定量研究
脉冲射频辉光发射光谱法(pulse - rf - gdoes)在高分辨率(HR)深度剖面分析中显示出巨大的潜力。本文采用新扩展的混合-粗糙度-信息深度(MRI)模型,对60 × Mo (3nm)/B4C (0.3 nm)/Si (3.7 nm)的GDOES深度剖面进行了量化。我们评估了厚度和溅射速率对极薄层深度分布的影响。我们证明,如果在深度剖面上发生优先溅射,使用测量时间-浓度剖面的半最大全宽度(FWHM)值来确定溅射速率和相应厚度的方法是不可靠的。
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