Fabrication and characterization of bismuth-telluride based thin films by electrodeposition

Naoki Hatsuta, Ken-ichi Matsuoka, M. Takashiri
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Abstract

This paper describes the fabrication and characterization of bismuth telluride (Bi-Te), bismuth selenide (Bi-Se) and bismuth telluride selenium (Bi-Te-Se) thin films by electrodeposition. We examined the relationship between the mole ratio in the solution and the thermoelectric and structural properties of thin films. The thermoelectric properties, in terms of the electrical conductivity, Seebeck coefficient and power factor, were measured at room temperature. Then, the structural properties such as surface morphology and atomic composition were analyzed. The power factor of Bi-Te, Bi-Se and Bi-Te-Se thin films were achieved 3.1, 13.3 and 10.3  W/cm/K 2 , respectively. Although resulting performances were relatively high compared to those of thin films prepare using electrodeposition, there is still room for improvement to optimize the atomic composition of the thin
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电沉积法制备碲化铋基薄膜及表征
本文介绍了电沉积法制备碲化铋(Bi-Te)、硒化铋(Bi-Se)和碲化铋硒(Bi-Te- se)薄膜及其表征。我们考察了溶液中的摩尔比与薄膜热电性能和结构性能之间的关系。在室温下测量了材料的热电性能,包括电导率、塞贝克系数和功率因数。然后对其表面形貌和原子组成等结构性能进行了分析。Bi-Te、Bi-Se和Bi-Te- se薄膜的功率因数分别为3.1、13.3和10.3W/cm/K 2。虽然与电沉积制备的薄膜相比,所得到的性能相对较高,但在优化薄膜的原子组成方面仍有改进的余地
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