Influence of bath composition on the electrodeposition of cobalt-molybdenum amorphous alloy thin films

Qiaoying Zhou, Hongliang Ge, Guoying Wei, Qiong Wu
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引用次数: 8

Abstract

Cobalt-molybdenum (Co-Mo) amorphous alloy thin films were deposited on copper substrates by the electrochemical method at pH 4.0. Among the experimental electrodeposition parameters, only the concentration ratio of molybdate to cobalt ions ([MoO42−]/[Co2−]) was varied to analyze its influence on the mechanism of induced cobalt-molybdenum codeposition. Voltammetry was one of the main techniques, which was used to examine the voltammetric response, revealing that cobalt-molybdenum codeposition depended on the nature of the species in solution. To correlate the type of the film to the electrochemical response, various cobalt-molybdenum alloy thin films obtained from different [MoO42−]/[Co2+] solutions were tested. Crack-free homogeneous films could be easily obtained from the low molybdate concentrations ([MoO42−]/[Co2+]) ≈0.05) applying low deposition potentials. Moreover, the content of molybdenum up to 30wt% could be obtained from high molybdate concentration; in this case, the films showed cracks. The formation of these cracked films could be predicted from the observed distortions in the curves of electric current-time (j-t) deposition transients. The films with amorphous structure were obtained. The hysteresis loops suggested that the easily magnetized axis was parallel to the surface of the films. A saturation magnetization of 137 emu.g−1 and a coercivity of 87 Oe of the film were obtained when the deposition potential was −1025 mV, and ([MoO42−]/[Co2+]) was 0.05 in solution, which exhibited a nicer soft-magnetic response.

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镀液成分对钴钼非晶合金薄膜电沉积的影响
在pH 4.0条件下,采用电化学方法在铜衬底上沉积钴钼(Co-Mo)非晶合金薄膜。在实验电沉积参数中,仅改变钼酸盐与钴离子([MoO42−]/[Co2−])的浓度比,分析其对诱导钴钼共沉积机理的影响。伏安法是主要技术之一,用于检测伏安响应,揭示了钴钼共沉积取决于溶液中物质的性质。为了将薄膜类型与电化学响应联系起来,测试了不同[MoO42−]/[Co2+]溶液中获得的各种钴钼合金薄膜。在低沉积电位条件下,低钼酸盐浓度([MoO42−]/[Co2+])≈0.05)可以得到无裂纹的均匀薄膜。高钼酸盐浓度下,钼含量可达30wt%;在这种情况下,胶片出现了裂缝。这些裂纹膜的形成可以通过观察到的电流-时间(j-t)沉积瞬态曲线的畸变来预测。得到了具有非晶结构的薄膜。磁滞回线表明易磁化轴平行于薄膜表面。饱和磁化强度为137 emu。当沉积电位为- 1025 mV时,薄膜的g−1和矫顽力为87 Oe,溶液中([MoO42−]/[Co2+])为0.05,表现出较好的软磁响应。
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