Nguyet Quan Thi Minh, Hoa Tran Thi Ngoc, Duy Nguyen Van, H. Nguyen Duc, Hieu Nguyen Van
{"title":"INVESTIGATION OF I-V CHARACTERISTICS OF CARBON NANOTUBES AND TIN OXIDE NANOWIRES HETEROJUNCTION FOR GAS SENSING APPLICATIONS","authors":"Nguyet Quan Thi Minh, Hoa Tran Thi Ngoc, Duy Nguyen Van, H. Nguyen Duc, Hieu Nguyen Van","doi":"10.18173/2354-1059.2022-0026","DOIUrl":null,"url":null,"abstract":"In this study, heterojunctions of carbon nanotubes (CNTs) and tin oxide nanowires (SnO2) were investigated to determine their electrical performance for gas sensing applications. The I–V characteristics of the heterojunction were measured in air and H2S gas. The electrical parameters such as barrier height ϕB, ideality factor n, series resistance Rs, and reverse saturation current Io were extracted from the I-V plots. In H2S gas, the barrier height ϕB and series resistance Rs are lower compared to air, whereas the ideality factor n and saturation current Io are higher. These findings are essential for promoting technologies aimed at forming high-quality heterojunctions for gas sensing applications.","PeriodicalId":17007,"journal":{"name":"Journal of Science Natural Science","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science Natural Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18173/2354-1059.2022-0026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, heterojunctions of carbon nanotubes (CNTs) and tin oxide nanowires (SnO2) were investigated to determine their electrical performance for gas sensing applications. The I–V characteristics of the heterojunction were measured in air and H2S gas. The electrical parameters such as barrier height ϕB, ideality factor n, series resistance Rs, and reverse saturation current Io were extracted from the I-V plots. In H2S gas, the barrier height ϕB and series resistance Rs are lower compared to air, whereas the ideality factor n and saturation current Io are higher. These findings are essential for promoting technologies aimed at forming high-quality heterojunctions for gas sensing applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
