Anomalous Hall and Nernst effects in ferrimagnetic Mn4N films: Possible interpretations and prospects for enhancement

S. Isogami, K. Masuda, Y. Miura, N. Rajamanickam, Y. Sakuraba
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引用次数: 15

Abstract

Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($\sigma_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{\rm u}$ contaminated by another structure with negligible $K_{\rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{\rm ANE}$) of $+0.5\, \mu{\rm V/K}$ at $300\, {\rm K}$ gave a transverse thermoelectric coefficient ($\alpha_{xy}$) of $+0.34\, {\rm A/(m \cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $\alpha_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{\rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{\rm ANE}$ in Mn$_4$N through the sign reversal of $\sigma_{xy}$ and the enlargement of $\alpha_{xy}$ up to a theoretical value of $1.77\, {\rm A/(m \cdot K)}$.
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铁磁性Mn4N薄膜中的异常霍尔效应和能司特效应:可能的解释和增强前景
铁磁性Mn $_4$ N具有相当大的单轴磁各向异性($K_{\rm u}$)和低饱和磁化强度($M_{\rm s}$),是一种很有前途的基于反常能斯特效应(ANE)的热流传感器材料。实验和理论研究了溅射沉积Mn $_4$ N薄膜中的ANE和异常霍尔效应。结果表明,观察到的负异常霍尔电导率($\sigma_{xy}$)可以由两种不同的磁结构共存来解释,即由于氮的有序度不完美,具有高$K_{\rm u}$的主导磁结构被另一个可忽略$K_{\rm u}$的结构所污染。在$300\, {\rm K}$处观察到的$+0.5\, \mu{\rm V/K}$的横向热电功率($S_{\rm ANE}$)得到的横向热电系数($\alpha_{xy}$)为$+0.34\, {\rm A/(m \cdot K)}$,小于第一原理计算的预测值。基于第一性原理计算对$\alpha_{xy}$的解释使我们得出结论,通过$\sigma_{xy}$的符号反转和将$\alpha_{xy}$增大到理论值$1.77\, {\rm A/(m \cdot K)}$,实现高$K_{\rm u}$的单磁结构和优化调整费米能级是增强Mn $_4$ N中$S_{\rm ANE}$的有希望的方法。
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