Resilient die-stacked DRAM caches

Jaewoong Sim, G. Loh, Vilas Sridharan, Mike O'Connor
{"title":"Resilient die-stacked DRAM caches","authors":"Jaewoong Sim, G. Loh, Vilas Sridharan, Mike O'Connor","doi":"10.1145/2485922.2485958","DOIUrl":null,"url":null,"abstract":"Die-stacked DRAM can provide large amounts of in-package, high-bandwidth cache storage. For server and high-performance computing markets, however, such DRAM caches must also provide sufficient support for reliability and fault tolerance. While conventional off-chip memory provides ECC support by adding one or more extra chips, this may not be practical in a 3D stack. In this paper, we present a DRAM cache organization that uses error-correcting codes (ECCs), strong checksums (CRCs), and dirty data duplication to detect and correct a wide range of stacked DRAM failures, from traditional bit errors to large-scale row, column, bank, and channel failures. With only a modest performance degradation compared to a DRAM cache with no ECC support, our proposal can correct all single-bit failures, and 99.9993% of all row, column, and bank failures, providing more than a 54,000x improvement in the FIT rate of silent-data corruptions compared to basic SECDED ECC protection.","PeriodicalId":20555,"journal":{"name":"Proceedings of the 40th Annual International Symposium on Computer Architecture","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 40th Annual International Symposium on Computer Architecture","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2485922.2485958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 48

Abstract

Die-stacked DRAM can provide large amounts of in-package, high-bandwidth cache storage. For server and high-performance computing markets, however, such DRAM caches must also provide sufficient support for reliability and fault tolerance. While conventional off-chip memory provides ECC support by adding one or more extra chips, this may not be practical in a 3D stack. In this paper, we present a DRAM cache organization that uses error-correcting codes (ECCs), strong checksums (CRCs), and dirty data duplication to detect and correct a wide range of stacked DRAM failures, from traditional bit errors to large-scale row, column, bank, and channel failures. With only a modest performance degradation compared to a DRAM cache with no ECC support, our proposal can correct all single-bit failures, and 99.9993% of all row, column, and bank failures, providing more than a 54,000x improvement in the FIT rate of silent-data corruptions compared to basic SECDED ECC protection.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
弹性叠片DRAM缓存
模堆叠DRAM可以提供大量的封装内高带宽缓存存储。然而,对于服务器和高性能计算市场,这种DRAM缓存还必须提供足够的可靠性和容错性支持。虽然传统的片外存储器通过添加一个或多个额外的芯片来提供ECC支持,但这在3D堆栈中可能不实用。在本文中,我们提出了一个DRAM缓存组织,它使用纠错码(ecc),强校验和(crc)和脏数据复制来检测和纠正各种堆叠DRAM故障,从传统的位错误到大规模的行,列,银行和通道故障。与不支持ECC的DRAM缓存相比,我们的建议只有适度的性能下降,可以纠正所有单比特故障,以及99.9993%的行、列和银行故障,与基本的SECDED ECC保护相比,静默数据损坏的FIT率提高了54,000倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
AC-DIMM: associative computing with STT-MRAM Deconfigurable microprocessor architectures for silicon debug acceleration Thin servers with smart pipes: designing SoC accelerators for memcached An experimental study of data retention behavior in modern DRAM devices: implications for retention time profiling mechanisms Dynamic reduction of voltage margins by leveraging on-chip ECC in Itanium II processors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1