R. Golovashchenko, N. K. Zaetz, Y. Ostryzhnyi, A. S. Plevako, V. Derkach
{"title":"Precision temperature measurement unit for the low temperature dielectrometer","authors":"R. Golovashchenko, N. K. Zaetz, Y. Ostryzhnyi, A. S. Plevako, V. Derkach","doi":"10.1109/MSMW.2016.7538104","DOIUrl":null,"url":null,"abstract":"The description of the precision temperature measurement unit for measuring temperature of the investigated samples in the low-temperature dielectrometer in the range of 0.3 - 300 K with an accuracy of 0.05 K is given. Four-wire measurement circuit on an alternating current with use of the semiconductor temperature sensor (semiconductor film resistance thermometer) in the whole temperature range is implemented. The dielectric losses in a number of low-loss materials were measured in the millimeter wavelength range and a wide temperature range by using the designed unit. The example of the temperature dependence of the dielectric loss in gold doped silicon (Si:Au) is given.","PeriodicalId":6504,"journal":{"name":"2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW)","volume":"59 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2016.7538104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The description of the precision temperature measurement unit for measuring temperature of the investigated samples in the low-temperature dielectrometer in the range of 0.3 - 300 K with an accuracy of 0.05 K is given. Four-wire measurement circuit on an alternating current with use of the semiconductor temperature sensor (semiconductor film resistance thermometer) in the whole temperature range is implemented. The dielectric losses in a number of low-loss materials were measured in the millimeter wavelength range and a wide temperature range by using the designed unit. The example of the temperature dependence of the dielectric loss in gold doped silicon (Si:Au) is given.
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