Study the Structural Properties and Surface Morphology of CdO Thin Films Prepared by Chemical Spray pyrolysis

K. Saleh
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引用次数: 1

Abstract

CdO films were prepared using a chemical spray paralysis (CSP) method on the glass substrate at a temperature of 350 ° C and thickness (260 ± 15 nm), and study the effect annealing time (0, 1, 1.5, 2, 2.5) h at annealing temperature 450 °C on structural properties. The X-ray diffraction pattern the results showed that all CdO thin films have a polycrystalline structure and a prevalent growth in the direction (111), and the average grain size (G) in this direction ranges (29.80 - 33.23) nm. It generally increases in value while the agitation values, extraction density, number of crystals decrease by increasing the annealing time (0-2)h at annealing temperature 450 ° C of thin films. From the resulted of the atomic force microscope (AFM), the surface roughness, medium square root (RMS) and average grain size increase with the increasing of the annealing time (0-2) h, at annealing temperature 450 ° C. The thin film with annealing time 2.5 h at annealing temperature 450 °C . We note a slight decrease in the values of the coefficients ( XRD and AFM) Due to the changes in the crystal structure of thin films and beginning of cracks and crystal defects generated on the surface of the thin film during the annealing process. It has been observed in practice that the increase in the annealing time to 3 h at annealing temperature 450 ° C. led to the separation of the thin film from the substrates.
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化学喷雾热解法制备CdO薄膜的结构性能和表面形貌研究
采用化学喷雾麻痹法(CSP)在温度为350℃、厚度为260±15 nm的玻璃基板上制备了CdO薄膜,研究了450℃退火时间(0、1、1.5、2、2.5)h对结构性能的影响。x射线衍射结果表明,所有CdO薄膜均呈多晶结构,且普遍沿111方向生长,该方向的平均晶粒尺寸(G)在29.80 ~ 33.23 nm之间。在450°C退火温度下,随着退火时间(0 ~ 2)h的增加,薄膜的搅拌值、萃取密度、结晶数均有所减少。从原子力显微镜(AFM)的结果来看,在450℃退火温度下,薄膜的表面粗糙度、中方根(RMS)和平均晶粒尺寸随退火时间(0-2)h的增加而增大,在450℃退火温度下退火时间为2.5 h。我们注意到系数(XRD和AFM)值略有下降,这是由于薄膜的晶体结构发生了变化,并且在退火过程中薄膜表面产生了裂纹和晶体缺陷。在实践中观察到,在450℃退火温度下,将退火时间延长至3 h会导致薄膜与衬底分离。
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