Weak localisation and interaction effects in amorphous CuTi alloys

P. Lindqvist, O. Rapp
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引用次数: 12

Abstract

The electrical resistivity of amorphous Cu60Ti40 and Cu65Ti35 has been measured at temperatures between 20 mK and 18 K and in magnetic fields up to 4 T. The results are discussed in a framework given by the weak localisation theory including spin-orbit scattering and spin splitting (Fukuyama and Hoshino in 1981 (FH)) and electron-electron interaction theories (Al'tshulet et al. in 1984 (AA), Lee and Ramakrishnan in 1985). Values for the inelastic and spin-orbit scattering lifetimes are derived from the magnetic field dependence of the resistivity, rho (B). Independent determinations from the temperature dependence of rho give qualitative results in agreement with these values. The large spin-orbit scattering time in this alloy system makes a more accurate analysis of rho (T) difficult. The strong dependence on the diffusion constant in the results from rho (B) below 1 K is pointed out. Important differences between the FH and AA formulations of the weak localisation theory are stressed. In particular, the observed temperature dependence of rho (B) in the region where it is linear in square root B can be explained only within the FH theory.
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非晶CuTi合金中的弱局部化和相互作用效应
非晶Cu60Ti40和Cu65Ti35的电阻率在20 mK和18 K之间的温度和高达4 t的磁场下进行了测量,结果在弱局域化理论的框架内进行了讨论,包括自旋轨道散射和自旋分裂(Fukuyama和Hoshino在1981年(FH))和电子-电子相互作用理论(Al'tshulet等人在1984年(AA), Lee和Ramakrishnan在1985年)。非弹性和自旋轨道散射寿命的值是由电阻率的磁场依赖性导出的,rho (B)。由rho的温度依赖性独立确定的定性结果与这些值一致。该合金体系的自旋轨道散射时间较大,使得对rho (T)的精确分析变得困难。指出了rho (B)在1k以下的结果对扩散常数的依赖性。强调了弱局域化理论的FH和AA公式之间的重要区别。特别是,观测到的rho (B)在根号B线性区域的温度依赖性只能用FH理论来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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