Liquid Flow through Defective Layered Membranes: A Phenomenological Description

A. Quandt, A. Kyrylchuk, G. Seifert, David Tom'anek
{"title":"Liquid Flow through Defective Layered Membranes: A Phenomenological Description","authors":"A. Quandt, A. Kyrylchuk, G. Seifert, David Tom'anek","doi":"10.1103/PhysRevApplied.14.044038","DOIUrl":null,"url":null,"abstract":"We present a realistic phenomenological description of liquid transport through defective, layered membranes. We derive general expressions based on conventional models of laminar flow and extend the formalism to accommodate slip flow. We consider different types of defects including in-layer vacancies that provide an activation-free tortuous path through the membrane. Of the many factors that affect flow, the most important is the radius of in-layer vacancy defects, which enters in the fourth power in expressions for the flux density. We apply our formalism to water transport through defective multilayer graphene oxide membranes and find that the flow remains in the laminar regime. Our results show that observed high water permeability in this system can be explained quantitatively by a sufficient density of in-layer pores that shorten the effective diffusion path.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevApplied.14.044038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We present a realistic phenomenological description of liquid transport through defective, layered membranes. We derive general expressions based on conventional models of laminar flow and extend the formalism to accommodate slip flow. We consider different types of defects including in-layer vacancies that provide an activation-free tortuous path through the membrane. Of the many factors that affect flow, the most important is the radius of in-layer vacancy defects, which enters in the fourth power in expressions for the flux density. We apply our formalism to water transport through defective multilayer graphene oxide membranes and find that the flow remains in the laminar regime. Our results show that observed high water permeability in this system can be explained quantitatively by a sufficient density of in-layer pores that shorten the effective diffusion path.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
液体流过有缺陷的层状膜:一种现象学描述
我们提出了一个现实的现象学描述液体运输通过缺陷,分层膜。我们在传统层流模型的基础上推导出一般表达式,并对其形式进行扩展以适应滑动流。我们考虑了不同类型的缺陷,包括提供通过膜的无激活弯曲路径的层内空位。在影响流动的诸多因素中,最重要的是层内空位缺陷半径,它在通量密度表达式中处于四次方。我们将我们的形式应用于水通过有缺陷的多层氧化石墨烯膜的运输,发现流动仍然处于层流状态。我们的研究结果表明,该体系中观察到的高渗透率可以定量地解释为层内孔隙的足够密度缩短了有效扩散路径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A pathway towards high throughput Quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaSₓSe₁₋ₓ Data analytics accelerates the experimental discovery of new thermoelectric materials with extremely high figure of merit Thermal laser evaporation of elements from across the periodic table Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn–Cr)AlGe films fabricated onto thermally oxidized silicon substrates The Mesoscale Crystallinity of Nacreous Pearls
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1