Simultaneous measurement of electron beam size and divergence with an undulator

B. Yang, A. Lumpkin
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引用次数: 6

Abstract

We present the simultaneous measurement of beam divergence and source size based on the APS diagnostic undulator line. A 300-/spl mu/m-thick Si(400) crystal monochromator is used to measure the divergence with a resolution down to 3 /spl mu/rad (1 /spl mu/rad with the third harmonic). X-rays transmitted through the crystal are simultaneously used by a pinhole camera to measure the beam size, at a resolution of about 40 /spl mu/m. We demonstrate that this measurement of emittance is robust against fluctuations of lattice functions due to a partial cancellation of systematic errors present in each of the measurements.
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用波动器同时测量电子束大小和散度
本文提出了基于APS诊断波动线的光束发散度和源尺寸的同时测量方法。使用300-/spl mu/m厚的Si(400)晶体单色仪测量散度,分辨率低至3 /spl mu/rad(三次谐波为1 /spl mu/rad)。通过晶体传输的x射线同时被针孔相机用来测量光束的大小,分辨率约为40 /spl mu/m。我们证明,由于每个测量中存在的系统误差部分抵消,这种发射度测量对晶格函数的波动具有鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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