Jiho Joo, Sanghoon Kim, I. Kim, Ki-seok Jang, Gyungock Kim
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引用次数: 7
Abstract
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.
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