S. E. H. Amiri, P. Ranga, D. Y. Li, F. Fan, C. Ning
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引用次数: 3
Abstract
InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.
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