Optical Band Gap and Electrical Conductivity of Doped Conducting Polypyrrole

2019 IEEE 11th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment, and Management ( HNICEM ) Pub Date : 2019-11-01 DOI:10.1109/HNICEM48295.2019.9072769

Chiara Rosario Julia Lanuza, Maria Carla Manzano, Enrique Manzano, N. Alcantara, Alyssa Marie Llanes, Hui Lin Ong

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Abstract

Conducting polypyrrole thin films, doped with sodium-p-toluenesulfonate (Na-pTS) and potassium-hydroquinone monosulfate (K-HQS), were prepared by electrochemical oxidation of pyrrole on indium-tin-oxide/glass substrates. The optical band gaps of the doped polymer materials were determined from their UV-Vis absorption spectra. For polypyrrole doped with Na-pTS, increasing the doping level, from 0.10 M to 0.12 M Na-pTs decreases the optical band gap from 2.05 eV to 1.98 eV. Also, doping polypyrrole with K-HQS was found to produce lower optical band gap, i.e. 1.86 eV for 0.10 M K-HQS dopant molarity. The electrical conductivity of the Na-pTS-doped polypyrrole films, measured using van der Pauw technique, were found to increase with higher doping level; conductivity values range from 105 to 151 Ω-1cm-1.

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掺杂导电聚吡咯的光带隙和电导率

采用电化学氧化法在氧化铟锡/玻璃衬底上制备了掺杂对甲苯磺酸钠(Na-pTS)和单硫酸氢醌钾(K-HQS)的导电聚吡咯薄膜。通过其紫外可见吸收光谱测定了掺杂聚合物材料的光学带隙。对于掺杂Na-pTS的聚吡咯，当掺杂水平从0.10 M增加到0.12 M时，光学带隙从2.05 eV减少到1.98 eV。此外，K-HQS掺杂聚吡咯产生的光学带隙较低，当K-HQS掺杂量为0.10 M时，带隙为1.86 eV。利用van der Pauw技术测量了na - pts掺杂聚吡咯薄膜的电导率，发现随着掺杂水平的增加，薄膜的电导率增加;电导率值范围从105到151 Ω-1cm-1。

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2019 IEEE 11th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment, and Management ( HNICEM )

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