A Comparable Study on Stray Grain Susceptibilities on Different Crystallographic Planes in Single Crystal Superalloys

J.C. Guo, P. Rong, L. Wang, W.J. Chen, S.X. Han, R.N. Yang, X.W. Lei, W. Yao, N. Wang
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引用次数: 13

Abstract

Abstract The substrate orientation can affect the stray grain formation in laser remelted single crystal superalloys. A systematic investigation on the effect of substrate orientation on stray grain susceptibility was performed by varying laser scanning directions on three most conventional crystallographic planes (001), (011), and (111). We found that the scanning direction has a drastic effect on stray grain formation in (011) and (111) planes but shows less impact in (001) plane. The comparison of different planes reveals that the stray gain susceptibility in (011) plane is the weakest whereas that in (111) plane is the strongest. This can be attributed to the lower volume fraction of the local stray grains on the (011) plane. Our results show that stray grain can be depressed most effectively if a laser repair is performed in (011) plane along [100] direction, which can provide an in-depth insight into the mechanism of how to avoid stray grain formation in the future laser repair of single crystal components.
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单晶高温合金中不同晶面杂散晶粒磁化率的比较研究
摘要:激光重熔单晶高温合金时,衬底取向会影响杂散晶粒的形成。通过在三个最传统的晶体平面(001)、(011)和(111)上改变激光扫描方向,系统地研究了衬底取向对杂散颗粒磁化率的影响。发现扫描方向对(011)和(111)面杂散晶粒的形成有较大影响,而对(001)面杂散晶粒的形成影响较小。不同平面的比较表明,(011)平面的杂散增益敏感性最弱,(111)平面的杂散增益敏感性最强。这可以归因于(011)平面上局部杂散颗粒的体积分数较低。我们的研究结果表明,在(011)平面沿[100]方向进行激光修复可以最有效地抑制杂散颗粒的形成,这为未来单晶部件激光修复中如何避免杂散颗粒的形成提供了深入的机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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