M. S. Islam, M. F. Hossain, S. M. Abdur Razzak, M. Haque, M. N. Khan
{"title":"Zinc oxide thin film fabricated by thermal evaporation method for water splitting application","authors":"M. S. Islam, M. F. Hossain, S. M. Abdur Razzak, M. Haque, M. N. Khan","doi":"10.1109/CEEE.2015.7428270","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to fabricate zinc oxide (ZnO) photoelectrode by a modified thermal evaporation system for water splitting application. At first, zinc thin film has been deposited on bare fluorine doped tin oxide (FTO) glass substrate by a modified thermal evaporation system with chamber pressure 0.05 mbar, source temperature 700°C, source substrate distance 3 cm and deposition time 5 min. For obtaining ZnO thin film, the prepared zinc film is annealed at 500°C for 2 hours in atmosphere. The prepared ZnO film is characterized and investigated the photoelectrochemical performance and suitability for splitting of water.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"61 51","pages":"253-256"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The aim of this paper is to fabricate zinc oxide (ZnO) photoelectrode by a modified thermal evaporation system for water splitting application. At first, zinc thin film has been deposited on bare fluorine doped tin oxide (FTO) glass substrate by a modified thermal evaporation system with chamber pressure 0.05 mbar, source temperature 700°C, source substrate distance 3 cm and deposition time 5 min. For obtaining ZnO thin film, the prepared zinc film is annealed at 500°C for 2 hours in atmosphere. The prepared ZnO film is characterized and investigated the photoelectrochemical performance and suitability for splitting of water.
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