LPE growth of InGaAs/InP and AiGaInAs/InP structures

Abstract

General studies for liquid phase epitaxial (LPE) growth of InGaAs layers on InP substrates are described; i.e. experimental determination and calculation of the In-Ga-As ternary phase diagram, LPE growth conditions for the growth of lattice-matched In_0.53Ga_0.47As layers on InP substrates, substrate orientation dependence of distribution coefficients and growth rate, growth conditions to obtain misfit dislocation-free InGaAs layers and behavior of misfit dislocations, growth conditions to obtain high-purity InGaAs layers, the direct growth of InP on InGaAs layers using (111)A oriented substrates, and application of LPE grown InGaAs for avalanche photodiodes. As a topic of LPE growth of InGaAs/InP, a new method to supply solute elements, Ga and As, in growth solutions for the purpose of growth of very thick InGaAs layers is demonstrated.

The LPE growth of AlGaInAs layers on InP substrates is also described; i.e. calculated results of the Al-Ga-In-As quaternary phase diagram, LPE growth conditions for the growth of lattice-matched Al_0.48In_0.52As and AlGaInAs layers on InP substrates, substrate orientation dependence of surface morphology of the LPE layers, growth rate of Al_0.48In_0.52As and AlGaInAs, growth of heterostructures, and electrical and optical properties of Al_0.48In_0.52As and AlGaInAs layers.