Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures

Abstract

The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.