Gas sensing properties of indium–gallium–zinc–oxide gas sensors in different light intensity

Kuen-Lin Chen , Guo-Jhen Jiang , Kai-Wei Chang , Jan-Han Chen , Chiu-Hsien Wu
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引用次数: 27

Abstract

We have successfully observed the change in indium–gallium–zinc–oxide (IGZO) gas sensor sensitivity by controlling the light emitting diode (LED) power under the same gas concentrations. The light intensity dependence of sensor properties is discussed. Different LED intensities obviously affected the gas sensor sensitivity, which decays with increasing LED intensity. High LED intensity decreases not only gas sensor sensitivity but also the response time (T90), response time constant (τres) and the absorption rate per second. Low intensity irradiated to sensor causes high sensitivity, but it needs larger response time. Similar results were also observed in other kinds of materials such as TiO2. According to the results, the sensing properties of gas sensors can be modulated by controlling the light intensity.

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不同光强下铟镓锌氧化物气体传感器的气敏性能
在相同的气体浓度下,通过控制发光二极管(LED)的功率,我们成功地观察到了铟镓锌氧化物(IGZO)气体传感器灵敏度的变化。讨论了传感器性能与光强的关系。不同LED强度对气体传感器的灵敏度有明显影响,随LED强度的增加而衰减。高LED强度不仅降低了气体传感器的灵敏度,而且降低了响应时间(T90)、响应时间常数(τres)和每秒吸收率。低强度辐射可提高传感器的灵敏度,但需要较长的响应时间。类似的结果也被观察到在其他种类的材料,如TiO2。根据研究结果,可以通过控制光强来调节气体传感器的传感性能。
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