A. Parmaliana *, F. Frusteri, D. Miceli, A. Mezzapica, M.S. Scurrell, N. Giordano
{"title":"Factors controlling the reactivity of the silica surface in methane partial oxidation","authors":"A. Parmaliana *, F. Frusteri, D. Miceli, A. Mezzapica, M.S. Scurrell, N. Giordano","doi":"10.1016/0166-9834(91)80102-3","DOIUrl":null,"url":null,"abstract":"<div><p>Catalytic partial oxidation of methane with oxygen on several oxide supports has been studied by using a batch reactor. The reactivity of various commercial SiO<sub>2</sub> samples at 520°C (“precipitated”, “extruded”, “gel” and “fumed”), expressed in terms of space time yield to HCHO, has been particularly ascertained with reference to their preparation method and sodium content. The “highest” activity of the “precipitated” SiO<sub>2</sub> sample is further enhanced by heat-treatment at 1000°C.</p></div>","PeriodicalId":8091,"journal":{"name":"Applied Catalysis","volume":"78 2","pages":"Pages L7-L12"},"PeriodicalIF":0.0000,"publicationDate":"1991-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0166-9834(91)80102-3","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Catalysis","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0166983491801023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
Catalytic partial oxidation of methane with oxygen on several oxide supports has been studied by using a batch reactor. The reactivity of various commercial SiO2 samples at 520°C (“precipitated”, “extruded”, “gel” and “fumed”), expressed in terms of space time yield to HCHO, has been particularly ascertained with reference to their preparation method and sodium content. The “highest” activity of the “precipitated” SiO2 sample is further enhanced by heat-treatment at 1000°C.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
