{"title":"Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation","authors":"Haddou El Ghazi , Yasin Ecker Ramazan","doi":"10.1016/j.ssc.2023.115341","DOIUrl":null,"url":null,"abstract":"<div><p><span>Analytical model to evaluate the photovoltaic performance<span> via the short circuit current density, open circuit voltage, fill factor, and efficiency of nonpolar (In,Ga)N solar cells at room temperature is conducted via this paper. The Indium<span> content and structure thickness including the doping concentration impacts are assessed to obtain the optimum values that yield high efficiencies. The band gap energy, reverse saturation current density, and carrier mobility are the important factors that govern how the solar cell performance characteristics change with the adjusted parameters. The solar cell characteristics are calculated for American Society for testing and Materials experimental data related to 1-sun AM1.5D, AM1.5G, and AM0 spectra. A high quality </span></span></span><span><math><mrow><msub><mrow><mi>I</mi><mi>n</mi></mrow><mn>0.42</mn></msub><msub><mrow><mi>G</mi><mi>a</mi></mrow><mn>0.58</mn></msub><mi>N</mi></mrow></math></span> <span><math><mrow><mo>(</mo><mrow><mn>1.42</mn><mi>e</mi><mi>V</mi></mrow><mo>)</mo></mrow></math></span> solar cell with a <span><math><mrow><mn>3</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> thickness, <span><math><mrow><msup><mn>10</mn><mn>17</mn></msup><mi>c</mi><msup><mi>m</mi><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></math></span> doping concentration and reflection coefficient of about <span><math><mrow><mn>15</mn><mo>%</mo></mrow></math></span> can display as optimum efficiency as <span><math><mrow><mn>25.43</mn><mo>%</mo><mo>,</mo><mn>25.16</mn><mo>%</mo></mrow></math></span> and <span><math><mrow><mn>22.87</mn><mo>%</mo></mrow></math></span><span> under respectively 1-sun AM1.5G, AM1.5D and AM0 illuminations. The optimum AM1.5G related photovoltaic conversion efficiency is reached for </span><span><math><mrow><mi>F</mi><mi>F</mi><mo>=</mo><mn>89.2</mn><mo>%</mo></mrow></math></span>, <span><math><mrow><msub><mi>V</mi><mrow><mi>o</mi><mi>c</mi></mrow></msub><mo>=</mo><mn>1.12</mn><mi>V</mi></mrow></math></span> and <span><math><mrow><msub><mi>J</mi><mrow><mi>s</mi><mi>c</mi></mrow></msub><mo>=</mo><mn>28.63</mn><mspace></mspace><mi>m</mi><mi>A</mi><mo>.</mo><mi>c</mi><msup><mi>m</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup></mrow></math></span>.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"373 ","pages":"Article 115341"},"PeriodicalIF":2.4000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109823002788","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2023/9/20 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Analytical model to evaluate the photovoltaic performance via the short circuit current density, open circuit voltage, fill factor, and efficiency of nonpolar (In,Ga)N solar cells at room temperature is conducted via this paper. The Indium content and structure thickness including the doping concentration impacts are assessed to obtain the optimum values that yield high efficiencies. The band gap energy, reverse saturation current density, and carrier mobility are the important factors that govern how the solar cell performance characteristics change with the adjusted parameters. The solar cell characteristics are calculated for American Society for testing and Materials experimental data related to 1-sun AM1.5D, AM1.5G, and AM0 spectra. A high quality solar cell with a thickness, doping concentration and reflection coefficient of about can display as optimum efficiency as and under respectively 1-sun AM1.5G, AM1.5D and AM0 illuminations. The optimum AM1.5G related photovoltaic conversion efficiency is reached for , and .
通过建立常温下非极性(In,Ga)N太阳能电池的短路电流密度、开路电压、填充系数和效率来评价光伏性能的解析模型。评估了铟含量和结构厚度,包括掺杂浓度的影响,以获得产生高效率的最佳值。带隙能、反向饱和电流密度和载流子迁移率是决定太阳能电池性能随调整参数变化的重要因素。根据美国测试与材料学会(American Society for testing and Materials)的1太阳AM1.5D、AM1.5G和AM0光谱实验数据计算了太阳能电池的特性。采用厚度为3μm、掺杂浓度为1017cm−3、反射系数约为15%的高质量In0.42Ga0.58N (1.42eV)太阳能电池,在单太阳AM1.5G、AM1.5D和AM0照明下的最佳效率分别为25.43%、25.16%和22.87%。当FF=89.2%, Voc=1.12V, Jsc=28.63mA.cm−2时,AM1.5G相关光伏转换效率达到最佳。
期刊介绍:
Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged.
A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions.
The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.