Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

IF 4.8 Q2 NANOSCIENCE & NANOTECHNOLOGY ACS Nanoscience Au Pub Date : 2022-08-30 DOI:10.1021/acsnanoscienceau.2c00028
Robin Sjökvist*, Marcus Tornberg, Mikelis Marnauza, Daniel Jacobsson and Kimberly A. Dick, 
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引用次数: 5

Abstract

Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.

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三元InGaAs纳米线多层生长模式的观察
金种子半导体纳米线通常被认为只能以一层接一层的生长模式生长,其中单个层一次成核并生长,中间有孵育步骤。最近的原位研究表明,在某些情况下,二进制半导体纳米线会以多层方式生长,在纳米颗粒和纳米线之间的界面上形成一堆不完整的层。在本研究中,利用环境透射电镜原位分析了三元InGaAs纳米线的生长行为。研究表明,多层生长也发生在三元纳米线中,并且似乎比二元纳米线更常见。此外,观察到的多层堆叠的大小比以前报道的要大得多。这项研究详细说明了多层结构对纳米线整体生长的影响,以及它所表现出来的周围条件。我们表明多层生长是高度动态的,其中层的堆叠通过在生长层之间传输材料而有规律地改变尺寸。另一个观察结果是,多层生长可以与晶体缺陷的形成和成分的变化一起开始。此外,本文还讨论了在GaAs和InAs之间形成异质结构时,多层材料在生长失败和扭结等行为中的作用。多层生长在这种三元材料体系中的普遍存在意味着,为了充分了解和准确预测复杂成分和结构的纳米线的生长,必须考虑多层生长。
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来源期刊
ACS Nanoscience Au
ACS Nanoscience Au 材料科学、纳米科学-
CiteScore
4.20
自引率
0.00%
发文量
0
期刊介绍: ACS Nanoscience Au is an open access journal that publishes original fundamental and applied research on nanoscience and nanotechnology research at the interfaces of chemistry biology medicine materials science physics and engineering.The journal publishes short letters comprehensive articles reviews and perspectives on all aspects of nanoscience and nanotechnology:synthesis assembly characterization theory modeling and simulation of nanostructures nanomaterials and nanoscale devicesdesign fabrication and applications of organic inorganic polymer hybrid and biological nanostructuresexperimental and theoretical studies of nanoscale chemical physical and biological phenomenamethods and tools for nanoscience and nanotechnologyself- and directed-assemblyzero- one- and two-dimensional materialsnanostructures and nano-engineered devices with advanced performancenanobiotechnologynanomedicine and nanotoxicologyACS Nanoscience Au also publishes original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials engineering physics bioscience and chemistry into important applications of nanomaterials.
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