A 512-Pixel, 51-kHz-Frame-Rate, Dual-Shank, Lens-Less, Filter-Less Single-Photon Avalanche Diode CMOS Neural Imaging Probe

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2019-10-24 DOI:10.1109/JSSC.2019.2941529
Jaebin Choi;Adriaan J. Taal;Eric H. Pollmann;Changhyuk Lee;Kukjoo Kim;Laurent C. Moreaux;Michael L. Roukes;Kenneth L. Shepard
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引用次数: 16

Abstract

We present an implantable single-photon shank-based imager, monolithically integrated onto a single CMOS IC. The imager comprises of 512 single-photon avalanche diodes distributed along two shanks, with a 6-bit depth in-pixel memory and an on-chip digital-to-time converter. To scale down the system to a minimally invasive form factor, we substitute optical filtering and focusing elements with a time-gated, angle-sensitive detection system. The imager computationally reconstructs the position of fluorescent sources within a 3-D volume of 3.4 mm $\times $ 600 $\mathrm {\mu }\text{m}\,\,\times $ 400 $\mu \text{m}$ .
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512像素,51 kHz帧速率,双柄,无透镜,无滤波器单光子雪崩二极管CMOS神经成像探头。
我们提出了一种基于单光子柄的可植入成像器,单片集成到单个CMOS IC上。该成像器包括512个单光子雪崩二极管,沿两个柄分布,具有6位深度的像素存储器和片上数字-时间转换器。为了将系统缩小到微创外形,我们用时间门控、角度敏感的检测系统代替了光学滤波和聚焦元件。成像器通过计算重建3.4 mm×600µm×400µm三维体积内荧光源的位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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