{"title":"纳秒级电子脉冲测定半导体电性能的应用","authors":"J.W. Leonhardt, R. Goeldner, J. Boes, R. Mehnert","doi":"10.1016/0146-5724(85)90163-3","DOIUrl":null,"url":null,"abstract":"<div><p>p<sup>+</sup>-i-n<sup>+</sup>-diodes were irradiated by means of 10 ns-electron pulses with energies of 0.3 - 1 MeV. The induced current pulse was measured. The half times of growth and decay give information about electrical carrier life times and diffusion lengths.</p></div>","PeriodicalId":101054,"journal":{"name":"Radiation Physics and Chemistry (1977)","volume":"25 4","pages":"Pages 821-826"},"PeriodicalIF":0.0000,"publicationDate":"1985-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-5724(85)90163-3","citationCount":"0","resultStr":"{\"title\":\"Application of nanosecond electron pulses to determine electrical properties of semiconductors\",\"authors\":\"J.W. Leonhardt, R. Goeldner, J. Boes, R. Mehnert\",\"doi\":\"10.1016/0146-5724(85)90163-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>p<sup>+</sup>-i-n<sup>+</sup>-diodes were irradiated by means of 10 ns-electron pulses with energies of 0.3 - 1 MeV. The induced current pulse was measured. The half times of growth and decay give information about electrical carrier life times and diffusion lengths.</p></div>\",\"PeriodicalId\":101054,\"journal\":{\"name\":\"Radiation Physics and Chemistry (1977)\",\"volume\":\"25 4\",\"pages\":\"Pages 821-826\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-5724(85)90163-3\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Radiation Physics and Chemistry (1977)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146572485901633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Physics and Chemistry (1977)","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146572485901633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of nanosecond electron pulses to determine electrical properties of semiconductors
p+-i-n+-diodes were irradiated by means of 10 ns-electron pulses with energies of 0.3 - 1 MeV. The induced current pulse was measured. The half times of growth and decay give information about electrical carrier life times and diffusion lengths.
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