Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

In the paper degradation effects such as the self-heating effect and DIBL effect in 2D MoS2 based MOSFET is investigated by simulations. It is considered transistors with Al2O3 and HfO2 as gate oxide and SiO2 and HfO2 as back oxide (BOX). The self-heating effect (SHE) is simulated by using the thermodynamic transport model. Dependence of DIBL(drain induced barrier lowering) effect and lattice temperature in the channel center on the gate length for transistors with different gate oxide and BOX materials is considered. Transistors with channel fully covered and partly covered (only under the gate) by gate oxide is considered. It is shown that the transistors with Al2O3 as gate oxide and SiO2 as BOX materials has higher immunity against the DIBL effect and transistors with HfO2 as gate oxide and HfO2 as BOX materials has higher immunity against the SHE.