晶圆级短波红外微摄像机的设计与研制

A. Sood, Robert A. Richwine, G. Pethuraja, Y. Puri, Jesuk Lee, P. Haldar, N. Dhar
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引用次数: 6

摘要

作为各种陆军和海军任务的低成本成像仪,各种国防和商业应用都需要低成本红外传感器。基于SiGe的红外焦平面为开发晶圆级短波红外微相机提供了一种低成本的替代方案,不需要任何冷却,可以在可见光-近红外波段工作。基于SiGe的IRFPA的吸引人的特点将利用基于硅的技术,保证小的特征尺寸和兼容低功耗的硅CMOS电路进行信号处理。SiGe技术为开发可见光-近红外传感器提供了低成本的替代方案,不需要任何冷却,可以在0.4- 1.7微米范围内工作。基于SiGe的IRFPA的吸引人的特性将利用可在12英寸硅衬底上加工的硅基技术,这可以保证小的特征尺寸并与用于信号处理的硅CMOS电路兼容。本文将讨论晶圆级短波红外(SWIR)微相机的设计与开发。我们将讨论短波红外(SWIR)焦平面阵列(FPA)的制造方法和传感器配置,以显着降低SWIR FPA封装,光学和集成到微系统中的成本。
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Design and development of wafer-level short wave infrared micro-camera
Low cost IR Sensors are needed for a variety of Defense and Commercial Applications as low cost imagers for various Army and Marine missions. SiGe based IR Focal Planes offers a low cost alternative for developing wafer-level shortwave infrared micro-camera that will not require any cooling and can operate in the Visible-NIR band. The attractive features of SiGe based IRFPA’s will take advantage of Silicon based technology, that promises small feature size and compatibility with the low power silicon CMOS circuits for signal processing. SiGe technology offers a low cost alternative for developing Visible-NIR sensors that will not require any cooling and can operate from 0.4- 1.7 microns. The attractive features of SiGe based IRFPA’s will take advantage of Silicon based technology that can be processed on 12-inch silicon substrates, that can promise small feature size and compatibility with the Silicon CMOS circuit for signal processing. In this paper, we will discuss the design and development of Wafer-Level Short Wave Infrared (SWIR) Micro-Camera. We will discuss manufacturing approaches and sensor configurations for short wave infrared (SWIR) focal plane arrays (FPAs) that significantly reduce the cost of SWIR FPA packaging, optics and integration into micro-systems.
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