B. Fridman, A. Khapugin, V. Martynenko, R. Serebrov
{"title":"大脉冲电流LTT开关单元","authors":"B. Fridman, A. Khapugin, V. Martynenko, R. Serebrov","doi":"10.1109/ppc.2017.8291236","DOIUrl":null,"url":null,"abstract":"The results of research of heavy pulse current switches built on Light Triggered Thyristors (LTT) and pulsed diodes are presented. Transients in a semi-conductor switch are analyzed at a capacitor discharge in a Pulse Forming Network (PFN), which incorporates an inductor and crowbar diodes. Maximal currents for a semiconductor structure, at which thermo-generation peaks appear on oscillograms of forward voltage drop, have been determined. The switch-on process of LTT has been investigated and the need for application of speed-up R-C circuits for a fast and stable transition of the LTT semiconductor structure to the conducting state has been shown. The current switching into the crowbar diodes and pulse over-voltage generation at a reverse recovery of LTTs has been analyzed, and the snubbers for suppression of these over-voltages have been chosen. The results of testing performed at switching of a pulse current up to 100 kA with a voltage up to 6 kV confirm the validity of the accepted technical solutions.","PeriodicalId":247019,"journal":{"name":"2017 IEEE 21st International Conference on Pulsed Power (PPC)","volume":"62 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heavy pulse currents LTT switch unit\",\"authors\":\"B. Fridman, A. Khapugin, V. Martynenko, R. Serebrov\",\"doi\":\"10.1109/ppc.2017.8291236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of research of heavy pulse current switches built on Light Triggered Thyristors (LTT) and pulsed diodes are presented. Transients in a semi-conductor switch are analyzed at a capacitor discharge in a Pulse Forming Network (PFN), which incorporates an inductor and crowbar diodes. Maximal currents for a semiconductor structure, at which thermo-generation peaks appear on oscillograms of forward voltage drop, have been determined. The switch-on process of LTT has been investigated and the need for application of speed-up R-C circuits for a fast and stable transition of the LTT semiconductor structure to the conducting state has been shown. The current switching into the crowbar diodes and pulse over-voltage generation at a reverse recovery of LTTs has been analyzed, and the snubbers for suppression of these over-voltages have been chosen. The results of testing performed at switching of a pulse current up to 100 kA with a voltage up to 6 kV confirm the validity of the accepted technical solutions.\",\"PeriodicalId\":247019,\"journal\":{\"name\":\"2017 IEEE 21st International Conference on Pulsed Power (PPC)\",\"volume\":\"62 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 21st International Conference on Pulsed Power (PPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ppc.2017.8291236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 21st International Conference on Pulsed Power (PPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ppc.2017.8291236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The results of research of heavy pulse current switches built on Light Triggered Thyristors (LTT) and pulsed diodes are presented. Transients in a semi-conductor switch are analyzed at a capacitor discharge in a Pulse Forming Network (PFN), which incorporates an inductor and crowbar diodes. Maximal currents for a semiconductor structure, at which thermo-generation peaks appear on oscillograms of forward voltage drop, have been determined. The switch-on process of LTT has been investigated and the need for application of speed-up R-C circuits for a fast and stable transition of the LTT semiconductor structure to the conducting state has been shown. The current switching into the crowbar diodes and pulse over-voltage generation at a reverse recovery of LTTs has been analyzed, and the snubbers for suppression of these over-voltages have been chosen. The results of testing performed at switching of a pulse current up to 100 kA with a voltage up to 6 kV confirm the validity of the accepted technical solutions.