大脉冲电流LTT开关单元

B. Fridman, A. Khapugin, V. Martynenko, R. Serebrov
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摘要

介绍了基于光触发晶闸管和脉冲二极管的大脉冲电流开关的研究成果。在包含电感和撬棍二极管的脉冲形成网络(PFN)中,分析了电容器放电时半导体开关的瞬态。在正向电压降的示波图上出现发热峰的半导体结构的最大电流已被确定。对LTT的导通过程进行了研究,并指出为了使LTT半导体结构快速稳定地过渡到导电状态,需要应用加速R-C电路。分析了ltt反向恢复时进入撬棍二极管的电流切换和脉冲过电压的产生,并选择了抑制过电压的缓冲器。在切换高达100 kA的脉冲电流和高达6 kV的电压时进行的测试结果证实了所接受的技术解决方案的有效性。
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Heavy pulse currents LTT switch unit
The results of research of heavy pulse current switches built on Light Triggered Thyristors (LTT) and pulsed diodes are presented. Transients in a semi-conductor switch are analyzed at a capacitor discharge in a Pulse Forming Network (PFN), which incorporates an inductor and crowbar diodes. Maximal currents for a semiconductor structure, at which thermo-generation peaks appear on oscillograms of forward voltage drop, have been determined. The switch-on process of LTT has been investigated and the need for application of speed-up R-C circuits for a fast and stable transition of the LTT semiconductor structure to the conducting state has been shown. The current switching into the crowbar diodes and pulse over-voltage generation at a reverse recovery of LTTs has been analyzed, and the snubbers for suppression of these over-voltages have been chosen. The results of testing performed at switching of a pulse current up to 100 kA with a voltage up to 6 kV confirm the validity of the accepted technical solutions.
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