Hao-I Yang, Shih-Chi Yang, Mao-Chih Hsia, Yung-Wei Lin, Yi-Wei Lin, Chien-Hen Chen, Chi-Shin Chang, Geng-Cing Lin, Yin-Nien Chen, C. Chuang, W. Hwang, S. Jou, Nan-Chun Lien, Hung-Yu Li, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, C. Hsu
{"title":"高性能低VMIN 55nm 512Kb无扰动8T SRAM，具有自适应VVSS控制","authors":"Hao-I Yang, Shih-Chi Yang, Mao-Chih Hsia, Yung-Wei Lin, Yi-Wei Lin, Chien-Hen Chen, Chi-Shin Chang, Geng-Cing Lin, Yin-Nien Chen, C. Chuang, W. Hwang, S. Jou, Nan-Chun Lien, Hung-Yu Li, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, C. Hsu","doi":"10.1109/SOCC.2011.6085080","DOIUrl":null,"url":null,"abstract":"This paper describes a high-performance low VMIN SRAM with a disturb-free 8T cell. The SRAM utilizes single-ended buffer Read, and cross-point data-aware Write Word-Line structure with adaptive VVSS control to eliminate Read disturb and Half-Select disturb, thus facilitating bit-interleaving architecture and achieving low VMIN. A 512Kb test chip is implemented in UMC 55nm Standard Performance (SP) CMOS technology. The measurement results demonstrate operating frequency of 943MHz at 1.2V VDD and 209MHz at 0.6V VDD.","PeriodicalId":365422,"journal":{"name":"2011 IEEE International SOC Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control\",\"authors\":\"Hao-I Yang, Shih-Chi Yang, Mao-Chih Hsia, Yung-Wei Lin, Yi-Wei Lin, Chien-Hen Chen, Chi-Shin Chang, Geng-Cing Lin, Yin-Nien Chen, C. Chuang, W. Hwang, S. Jou, Nan-Chun Lien, Hung-Yu Li, Kuen-Di Lee, Wei-Chiang Shih, Ya-Ping Wu, Wen-Ta Lee, C. Hsu\",\"doi\":\"10.1109/SOCC.2011.6085080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a high-performance low VMIN SRAM with a disturb-free 8T cell. The SRAM utilizes single-ended buffer Read, and cross-point data-aware Write Word-Line structure with adaptive VVSS control to eliminate Read disturb and Half-Select disturb, thus facilitating bit-interleaving architecture and achieving low VMIN. A 512Kb test chip is implemented in UMC 55nm Standard Performance (SP) CMOS technology. The measurement results demonstrate operating frequency of 943MHz at 1.2V VDD and 209MHz at 0.6V VDD.\",\"PeriodicalId\":365422,\"journal\":{\"name\":\"2011 IEEE International SOC Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International SOC Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCC.2011.6085080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International SOC Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2011.6085080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control
This paper describes a high-performance low VMIN SRAM with a disturb-free 8T cell. The SRAM utilizes single-ended buffer Read, and cross-point data-aware Write Word-Line structure with adaptive VVSS control to eliminate Read disturb and Half-Select disturb, thus facilitating bit-interleaving architecture and achieving low VMIN. A 512Kb test chip is implemented in UMC 55nm Standard Performance (SP) CMOS technology. The measurement results demonstrate operating frequency of 943MHz at 1.2V VDD and 209MHz at 0.6V VDD.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
