AlGaAs抛物量子阱中的多子带电子迁移率

S. Palo, N. Sahoo, T. Sahu, A. K. Panda
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引用次数: 0

摘要

我们分析了δ掺杂AlxGa1-xAs抛物量子阱结构中多子带电子迁移率的增强。我们表明,由于子带电子波函数通过抛物线结构势的影响向阱中心移动,与方形量子阱相比,抛物量子阱中的迁移率大大增强。我们分析了由子带间相互作用介导的不同散射机制对子带迁移率的相互作用,得出了有趣的结果。
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Multi-subband electron mobility in AlGaAs parabolic quantum wells
We analyze the enhancement of multisubband electron mobility in delta-doped AlxGa1-xAs parabolic quantum well structures. We show that mobility is considerably enhanced in a parabolic quantum well compared to that in a square quantum well due to shifting of subband electron wave functions towards the centre of the well through the influence of the parabolic structure potential. We analyse the interplay of different scattering mechanisms on subband mobility mediated by intersubband interactions which leads to interesting results.
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