同轴耦合脊波导可调谐振荡器

R. Robertson, R. Eisenhart
{"title":"同轴耦合脊波导可调谐振荡器","authors":"R. Robertson, R. Eisenhart","doi":"10.1109/MWSYM.1981.1129880","DOIUrl":null,"url":null,"abstract":"A coaxially coupled ridged waveguide oscillator circuit using a pulsed IMPATT diode is described. Mechanical tuning bandwidths of 800 MHz (8%) at X-band, instantaneous locking bandwidths greater than 5 percent at 10 dB gain, and a circuit efficiency of 95 to 100 percent have been realized with a silicon pulsed double drift IMPATT diode under large signal conditions.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Coaxially Coupled Ridge Waveguide Tunable Oscillator\",\"authors\":\"R. Robertson, R. Eisenhart\",\"doi\":\"10.1109/MWSYM.1981.1129880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A coaxially coupled ridged waveguide oscillator circuit using a pulsed IMPATT diode is described. Mechanical tuning bandwidths of 800 MHz (8%) at X-band, instantaneous locking bandwidths greater than 5 percent at 10 dB gain, and a circuit efficiency of 95 to 100 percent have been realized with a silicon pulsed double drift IMPATT diode under large signal conditions.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

介绍了一种采用脉冲IMPATT二极管的同轴耦合脊波导振荡器电路。在大信号条件下,用硅脉冲双漂移IMPATT二极管实现了800mhz(8%)的x波段机械调谐带宽,10db增益时大于5%的瞬时锁定带宽,以及95%至100%的电路效率。
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Coaxially Coupled Ridge Waveguide Tunable Oscillator
A coaxially coupled ridged waveguide oscillator circuit using a pulsed IMPATT diode is described. Mechanical tuning bandwidths of 800 MHz (8%) at X-band, instantaneous locking bandwidths greater than 5 percent at 10 dB gain, and a circuit efficiency of 95 to 100 percent have been realized with a silicon pulsed double drift IMPATT diode under large signal conditions.
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