微波混合器的低电压低功耗设计

Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334) Pub Date : 1997-09-07 DOI:10.1109/ASIC.1997.617036

E. Allamando L, P.E. Gosse

{"title":"微波混合器的低电压低功耗设计","authors":"E. Allamando L, P.E. Gosse","doi":"10.1109/ASIC.1997.617036","DOIUrl":null,"url":null,"abstract":"K-band mixers are realised on GaAs MMIC technology by employing cold FET devices. With this submicrometer device, two configurations are studied and realized: the \"series\" and the \"shunt\". Experimental results are compared to theoretical predictions obtained on microwave nonlinear simulator by using an original modelling of the cold FET.","PeriodicalId":300310,"journal":{"name":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low voltage and low power design of microwave mixer\",\"authors\":\"E. Allamando L, P.E. Gosse\",\"doi\":\"10.1109/ASIC.1997.617036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"K-band mixers are realised on GaAs MMIC technology by employing cold FET devices. With this submicrometer device, two configurations are studied and realized: the \\\"series\\\" and the \\\"shunt\\\". Experimental results are compared to theoretical predictions obtained on microwave nonlinear simulator by using an original modelling of the cold FET.\",\"PeriodicalId\":300310,\"journal\":{\"name\":\"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASIC.1997.617036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1997.617036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用冷场效应晶体管器件，在GaAs MMIC技术上实现了k波段混频器。利用该亚微米器件，研究并实现了“串联”和“并联”两种配置。实验结果与在微波非线性模拟器上使用原始的冷场效应管模型得到的理论预测结果进行了比较。

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Low voltage and low power design of microwave mixer

K-band mixers are realised on GaAs MMIC technology by employing cold FET devices. With this submicrometer device, two configurations are studied and realized: the "series" and the "shunt". Experimental results are compared to theoretical predictions obtained on microwave nonlinear simulator by using an original modelling of the cold FET.

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Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)

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