AlGaN光电二极管用于UVC, UVB和UVA光谱范围

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW) Pub Date : 2015-05-07 DOI:10.1109/EICONRUSNW.2015.7102225

I. Lamkin, M. Andreev, S. Tarasov, A. Solomonov, S. Kurin

{"title":"AlGaN光电二极管用于UVC, UVB和UVA光谱范围","authors":"I. Lamkin, M. Andreev, S. Tarasov, A. Solomonov, S. Kurin","doi":"10.1109/EICONRUSNW.2015.7102225","DOIUrl":null,"url":null,"abstract":"A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined.","PeriodicalId":268759,"journal":{"name":"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"AlGaN photodiodes for UVC, UVB and UVA spectral ranges\",\"authors\":\"I. Lamkin, M. Andreev, S. Tarasov, A. Solomonov, S. Kurin\",\"doi\":\"10.1109/EICONRUSNW.2015.7102225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined.\",\"PeriodicalId\":268759,\"journal\":{\"name\":\"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EICONRUSNW.2015.7102225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EICONRUSNW.2015.7102225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

提出了一种基于Me-AlGaN肖特基势垒分离UVA、UVB和UVC光谱范围的紫外光电二极管技术。研究了改变AlGaN固溶体组成对制备的光电探测器长波长边缘光敏性的影响。考察了肖特基势垒金属对结构光敏性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

AlGaN photodiodes for UVC, UVB and UVA spectral ranges

A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

自引率

0.00%

发文量