生长过程中掺杂镍的硅中热致体的产生

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-04-30 DOI:10.37681/2181-1652-019-x-2021-2-2

K. Ismailov, E. J. Kosbergenov

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摘要

在这项工作中，研究表明，在硅晶体生长过程中引入镍原子，可以在温度450Ԩ和持续时间t = 0.5÷25小时的热退火过程中获得具有稳定电物理参数的材料。这是创造具有稳定参数的半导体器件材料的最具成本效益的方法

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GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH

In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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