基于忆阻器的感知器分类器:增加复杂性和应对不完善的硬件

F. Merrikh-Bayat, M. Prezioso, B. Chakrabarti, I. Kataeva, D. Strukov
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引用次数: 30

摘要

我们通过实验证明了将4×4二值图像分为4类,使用3层混合信号神经形态网络(“MLP感知器”),基于两个无源20×20记忆交叉棒阵列,与分立CMOS元件板集成。该网络具有10个隐藏层和4个输出层模拟CMOS神经元和428个金属氧化物忆阻器,即几乎比以前报道的任何功能无源(0T1R)忆阻器分类器复杂一个数量级。此外,该分类器的推理操作完全在集成硬件中完成。为了处理更大的交叉棒阵列,我们开发了一种半自动方法来形成和测试它们,并比较了几种记忆电阻训练方案,以应对这些设备的不完美行为,以及模拟CMOS神经元的可变性。通过实验验证了所提出的缺陷和变异容差方案的有效性,此外,通过在MNIST基准上对具有300个隐藏层神经元的更大网络的运行进行建模。最后,我们提出了一个简单的修改实现基于忆阻器的矢量乘矩阵乘法器,使其在更宽的温度范围内工作。
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Memristor-based perceptron classifier: Increasing complexity and coping with imperfect hardware
We experimentally demonstrate classification of 4×4 binary images into 4 classes, using a 3-layer mixed-signal neuromorphic network (“MLP perceptron”), based on two passive 20×20 memristive crossbar arrays, board-integrated with discrete CMOS components. The network features 10 hidden-layer and 4 output-layer analog CMOS neurons and 428 metal-oxide memristors, i.e. is almost an order of magnitude more complex than any previously reported functional passive (0T1R) memristor classifier. Moreover, the inference operation of this classifier is performed entirely in the integrated hardware. To deal with larger crossbar arrays, we have developed a semiautomatic approach to their forming and testing, and compared several memristor training schemes for coping with imperfect behavior of these devices, as well as with variability of analog CMOS neurons. The effectiveness of the proposed schemes for defect and variation tolerance was verified experimentally using the implemented network and, additionally, by modeling the operation of a larger network, with 300 hidden-layer neurons, on the MNIST benchmark. Finally, we propose a simple modification of the implemented memristor-based vector-by-matrix multiplier to allow its operation in a wider temperature range.
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