L. Anand, N. Kumar, S. Pragash, M. F. Ain, S. Hassan
{"title":"采用负载牵引技术的高效600mw pHEMT平衡放大器设计","authors":"L. Anand, N. Kumar, S. Pragash, M. F. Ain, S. Hassan","doi":"10.1109/RFM.2008.4897432","DOIUrl":null,"url":null,"abstract":"This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.","PeriodicalId":329128,"journal":{"name":"2008 IEEE International RF and Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High efficiency 600-mW pHEMT balance amplifier design with load pull technique\",\"authors\":\"L. Anand, N. Kumar, S. Pragash, M. F. Ain, S. Hassan\",\"doi\":\"10.1109/RFM.2008.4897432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.\",\"PeriodicalId\":329128,\"journal\":{\"name\":\"2008 IEEE International RF and Microwave Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International RF and Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFM.2008.4897432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International RF and Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFM.2008.4897432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High efficiency 600-mW pHEMT balance amplifier design with load pull technique
This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.
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