{"title":"用于蜂窝移动和基站的1.2V 65nm CMOS振荡器的相位脱敏的夹波和恢复技术","authors":"A. Visweswaran, R. Staszewski, J. Long","doi":"10.1109/ISSCC.2012.6177042","DOIUrl":null,"url":null,"abstract":"Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulk-CMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification.","PeriodicalId":255282,"journal":{"name":"2012 IEEE International Solid-State Circuits Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"A clip-and-restore technique for phase desensitization in a 1.2V 65nm CMOS oscillator for cellular mobile and base stations\",\"authors\":\"A. Visweswaran, R. Staszewski, J. Long\",\"doi\":\"10.1109/ISSCC.2012.6177042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulk-CMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification.\",\"PeriodicalId\":255282,\"journal\":{\"name\":\"2012 IEEE International Solid-State Circuits Conference\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2012.6177042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2012.6177042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A clip-and-restore technique for phase desensitization in a 1.2V 65nm CMOS oscillator for cellular mobile and base stations
Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulk-CMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification.