用于蜂窝移动和基站的1.2V 65nm CMOS振荡器的相位脱敏的夹波和恢复技术

A. Visweswaran, R. Staszewski, J. Long
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引用次数: 30

摘要

基站(BTS) RX振荡器相位噪声要求在600kHz和3MHz之间,很难满足使用大块cmos技术制造的全单片VCO。GSM-900-BTS和DCS-1800-BTS RX分别为-147dBc/Hz和-138dBc/Hz的800kHz规格,被认为是最难满足的。在GSM移动站(MS)中,发射和接收频带间隔为20MHz,这就对20MHz偏移[1]时的TX相位噪声要求为-162dBc/Hz。满足这一点的VCO无意中满足了相对宽松的RX规范。
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A clip-and-restore technique for phase desensitization in a 1.2V 65nm CMOS oscillator for cellular mobile and base stations
Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulk-CMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification.
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