基于GaN技术的三级6 - 18ghz高增益高功率放大器

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI:10.1109/MWSYM.2010.5516224

G. Mouginot, Z. Ouarch, B. Lefebvre, S. Heckmann, J. Lhortolary, D. Baglieri, D. Floriot, M. Camiade, H. Blanck, M. Le Pipec, D. Mesnager, P. Le Helleye

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引用次数: 38

摘要

开发了一种用于宽带应用的单片三级HPA。该MMIC采用基于SiC衬底的UMS 0.25µm GaN技术制造。在18GHz时，MMIC在连续波模式下实现了10W的输出功率，线性增益为20dB，功率增加效率为20%。HPA在6至18GHz范围内提供6至10W的输出功率，最小信号增益为18dB。所得的性能与仿真结果非常接近，非常有前景;这将在很短的时间内进一步改善。该演示是关于UMS 0.25µm GaN技术的第一个MMIC。

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Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

A monolithic three stage HPA has been developed for wide band applications. This MMIC is fabricated on UMS 0.25 µm GaN technology based on SiC substrate. At 18GHz, the MMIC achieved in CW mode 10W of output power with 20dB linear gain and 20% power added efficiency. The HPA provided 6 to 10W output power over 6 to 18GHz with minimum small signal gain of 18dB. These obtained performances are very promising and very close to the simulations; this will allow a very short term further improvement. This demonstration is the first MMIC on the UMS 0.25µm GaN technology.

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2010 IEEE MTT-S International Microwave Symposium

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