J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský
{"title":"砷化镓晶体中硅相关缺陷的横向分布和载流子密度","authors":"J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský","doi":"10.1002/PSSA.2211110137","DOIUrl":null,"url":null,"abstract":"The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors. \n \n \n \n[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Lateral Distribution of Si-Related Defects and Carrier Density in GaAs Crystals\",\"authors\":\"J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský\",\"doi\":\"10.1002/PSSA.2211110137\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors. \\n \\n \\n \\n[Russian Text Ignored].\",\"PeriodicalId\":240242,\"journal\":{\"name\":\"16 January\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"16 January\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2211110137\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"16 January","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2211110137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
研究了掺硅LEC生长的GaAs晶体边缘发射和外源Si相关波段的发光强度的空间分布。自由载流子分布由本征发光的半宽度和峰位置以及lo -声子-等离子体耦合模式在拉曼光谱中的位置确定。在n≈1018 cm−3的载流子浓度下，发光强度随载流子浓度的增加而增加，较高载流子浓度下发光强度急剧下降归因于俄歇复合。测量了1.35 eV (A)、1.2 eV (B)和1.0 eV (C)下硅相关发光带的温度依赖性。A带的温度行为与EL2中心的相似性支持了它对(Si-AsGa)给体的分配。[忽略俄语文本]。
Lateral Distribution of Si-Related Defects and Carrier Density in GaAs Crystals
The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors.
[Russian Text Ignored].
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