{"title":"基于梯度隙半导体转移电子器件的谐波模操作研究","authors":"I. Storozhenko, M. Kaydash, O. Yaroshenko","doi":"10.1109/MMET.2018.8460236","DOIUrl":null,"url":null,"abstract":"Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.","PeriodicalId":343933,"journal":{"name":"2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors\",\"authors\":\"I. Storozhenko, M. Kaydash, O. Yaroshenko\",\"doi\":\"10.1109/MMET.2018.8460236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.\",\"PeriodicalId\":343933,\"journal\":{\"name\":\"2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET)\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMET.2018.8460236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMET.2018.8460236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors
Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.