Small-Signal Modeling of GaAs – pHEMT Using Direct Extraction Method

In this paper 16 elements small-signal equivalent circuit for GaAs pHEMT is presented. ED02AH process based on III-V materiel is chosen. This process is used in the improvement of telecommunication systems, space and defense applications. This work presents the results of direct extraction of the small signal or linear model based on an analytical method and measurements of the dispersion parameters [S]. The extraction of the parameters of the small signal equivalent scheme is done for an ED02AH (6x15$\mu$m) process of GaAs technology, a transistor of 6 gate fingers, each with a width of 15 $\mu$m. A good agreement between the simulated and measured parameters S confirms the validity of the proposed method.