过渡金属掺杂单层SnS2可调磁性能的硅观察

Cecil N M Ouma, K. O. Obodo, M. Braun, M. Onani, F. Dejene
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引用次数: 3

摘要

计算硬件和软件的最新进步推动了硅技术的采用,如密度泛函理论(DFT),作为材料科学的研究工具。因此,本研究采用离散傅里叶变换研究了过渡金属掺杂原子对单层SnS2的影响。考虑的过渡金属掺杂剂有T1、V、Cr、Mn、Fe、Co、Ni、Cu和Zn。只考虑了阳离子取代掺杂,研究了单位点和多位点阳离子取代掺杂的掺杂谱。发现富s条件有利于Ni和Ti的两种掺杂谱,而不产生任何磁矩。这项研究为如何在材料研究中采用硅技术来评估掺杂剂对宿主材料性能的影响提供了见解。
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In Silico Insights into the Tunable Magnetic Properties of Transition Metal Doped Monolayer SnS2
Recent advancements in computation hardware and software has fueled the adoption of in silico techniques, such as density functional theory (DFT), as an investigative tool in materials' science. Hence, this study employs DFT to investigate the properties of monolayer SnS2 as function of transition metal dopant atoms. The transition metal dopants considered are T1, V, Cr, Mn, Fe, Co, Ni, Cu and Zn. Only cation substitutional doping has been considered and the doping profiles investigated were single-site and multi-site cation substitutional doping. S-rich conditions were found to favor both doping profiles with Ni and Ti not inducing any magnetic moment. This study provides insights on how in silico techniques can be adopted in material's research to evaluate dopant influences on the properties of the host.
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