{"title":"灵敏度提高的InP/InGaAs异质结双极光电晶体管","authors":"J. Campbell, A. Dentai, C. Burrus, J. F. Ferguson","doi":"10.1109/IEDM.1980.189884","DOIUrl":null,"url":null,"abstract":"The fabrication and device characteristics of back-illuminated InP/InGaAs n-p-n heterojunction phototransistors will be described. These devices consist of a \"wide-bandgap\" InP emitter with smaller bandgap InGaAs base and collector layers. Uniform spectral response is observed in the wavelength range from 0.95 µm to 1.6 µm. The DC optical gain increases from approximately 40 at an input power of 1 nW to over 1000 for an input power level of 5 µW. The small-signal gain is characteristically 2 to 3 times higher than the EC gain. The cut-off frequency fTis an increasing function of the incident light level; for 1 µW of incident power fT≃ 300 MHz. The possible applications of these phototransistors in fiber optic systems will be discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity\",\"authors\":\"J. Campbell, A. Dentai, C. Burrus, J. F. Ferguson\",\"doi\":\"10.1109/IEDM.1980.189884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and device characteristics of back-illuminated InP/InGaAs n-p-n heterojunction phototransistors will be described. These devices consist of a \\\"wide-bandgap\\\" InP emitter with smaller bandgap InGaAs base and collector layers. Uniform spectral response is observed in the wavelength range from 0.95 µm to 1.6 µm. The DC optical gain increases from approximately 40 at an input power of 1 nW to over 1000 for an input power level of 5 µW. The small-signal gain is characteristically 2 to 3 times higher than the EC gain. The cut-off frequency fTis an increasing function of the incident light level; for 1 µW of incident power fT≃ 300 MHz. The possible applications of these phototransistors in fiber optic systems will be discussed.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity
The fabrication and device characteristics of back-illuminated InP/InGaAs n-p-n heterojunction phototransistors will be described. These devices consist of a "wide-bandgap" InP emitter with smaller bandgap InGaAs base and collector layers. Uniform spectral response is observed in the wavelength range from 0.95 µm to 1.6 µm. The DC optical gain increases from approximately 40 at an input power of 1 nW to over 1000 for an input power level of 5 µW. The small-signal gain is characteristically 2 to 3 times higher than the EC gain. The cut-off frequency fTis an increasing function of the incident light level; for 1 µW of incident power fT≃ 300 MHz. The possible applications of these phototransistors in fiber optic systems will be discussed.
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