A new high voltage DPSOI structure with variable-k buried layer

This paper introduces a new high voltage double partial SOI (DPSOI) with variable-k (permittivity) dielectric for improving breakdown voltage. The mechanism of breakdown is that the length of vertical ionization integral increases significantly, because of the two symmetrical windows results it by folding effect and the additional electric field produced from variable-k dielectric buried layer modulates surface electric field, which decreases drastically the electric field peaks near the drain and source. Furthermore, the Si window alleviates the self-heating effect while maintaining higher vertical BV. The results indicate that the breakdown voltage of DPSOI is increased by 77.5-85.8% and the on-resistance is decreased nearly by 50% compared with these for the conventional SOI.