{"title":"一个21至31 GHz多级堆叠SOI功率放大器，PAE为33%，输出功率为18 dBm","authors":"Tiantong Ren, B. Floyd","doi":"10.1109/IMC-5G47857.2019.9160355","DOIUrl":null,"url":null,"abstract":"This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented i n GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave phased arrays. The PA features a linear pre-driver stage with 1.6 V supply and a three-stack FET output stage with 3.6 V supply. Measurement results show that at 26 GHz, the PA achieves a peak gain of 16.6 dB and a saturated output power (Psat) of 18.3 dBm with maximum power-added efficiency (PAE) of 32.8%. The 1-dB compression point (P1dB) is 16.2 dBm with PAE of 29.7%. The PA operates across 21 to 31 GHz with Psat above 17.3 dBm and gain above 13.6 dB.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power\",\"authors\":\"Tiantong Ren, B. Floyd\",\"doi\":\"10.1109/IMC-5G47857.2019.9160355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented i n GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave phased arrays. The PA features a linear pre-driver stage with 1.6 V supply and a three-stack FET output stage with 3.6 V supply. Measurement results show that at 26 GHz, the PA achieves a peak gain of 16.6 dB and a saturated output power (Psat) of 18.3 dBm with maximum power-added efficiency (PAE) of 32.8%. The 1-dB compression point (P1dB) is 16.2 dBm with PAE of 29.7%. The PA operates across 21 to 31 GHz with Psat above 17.3 dBm and gain above 13.6 dB.\",\"PeriodicalId\":373158,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMC-5G47857.2019.9160355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMC-5G47857.2019.9160355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power
This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented i n GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave phased arrays. The PA features a linear pre-driver stage with 1.6 V supply and a three-stack FET output stage with 3.6 V supply. Measurement results show that at 26 GHz, the PA achieves a peak gain of 16.6 dB and a saturated output power (Psat) of 18.3 dBm with maximum power-added efficiency (PAE) of 32.8%. The 1-dB compression point (P1dB) is 16.2 dBm with PAE of 29.7%. The PA operates across 21 to 31 GHz with Psat above 17.3 dBm and gain above 13.6 dB.
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