Xiaowei Zhou, Linyu Xu, Yuqi Zeng, Xiushan Wu, Jian Sun, Ge Shi
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Simulation of parameter influence of piezoelectric thin-film bulk acoustic resonator
With the increasing popularity of radio frequency communication, thin-film bulk acoustic resonator (FBAR) has attracted great attention for their superior performance. In this study, the working principle of thin-film bulk acoustic resonator (FBAR) is analyzed, and the analytical expression of FBAR impedance is derived based on electrical characteristics, thereby establishing the electromechanical equivalent model of FBAR. The fluence of the resonant area of the FBAR and the thickness of each film layer on the performance parameters of the FBAR is studied and analyzed with aid of the Advanced Design System (ADS) software. The simulation results show that with the increase of the thickness of each layer, the resonant frequency gradually decreases; with the increase of the resonant area, the resonant frequency is not affected, but the impedance value of the device decreases gradually.
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